DESCRIPTION
The 2SJ606 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A)
RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
Ciss = 4800 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V) VDSS −60 V
Gate to Source Voltage (V DS = 0 V) VGSS m 20 V
Drain Current (DC) (TC = 25°C) I D(DC) m 83 A
Drain Current (pulse) Note1 I D(pulse) m 300 A
Total Power Dissipation (TC = 25°C) PT 120 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 I AS −40 A
Single Avalanche Energy Note2 EAS 160 mJ
Notes 1. PW ≤ 10
μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V